2SJ603-ZJ

更新时间： 2024-11-17 22:15:03

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	81K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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2SJ603-ZJ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ603

SWITCHING

P-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

The 2SJ603 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

PART NUMBER

2SJ603

PACKAGE

TO-220AB

TO-262

2SJ603-S

FEATURES

2SJ603-ZJ

TO-263

• Super low on-state resistance:

R^DS(on)1= 48 mΩ MAX. (V^GS= −10 V, I^D= −13 A)

R^DS(on)2= 75 mΩ MAX. (V^GS= −4.0 V, I^D= −13 A)

• Low input capacitance:

Note

TO-220SMD

2SJ603-Z

Note TO-220SMD package is produced only in

Japan.

C^iss= 1900 pF TYP. (V^DS= −10 V, V^GS= 0 V)

• Built-in gate protection diode

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−60

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

P^T

1.5

150

(TO-262)

Tch

°C

Storage Temperature

Single Avalanche Current ^Note2

Tstg

−55 to +150

−25

I^AS

Single Avalanche Energy ^Note2

E^AS

62.5

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= −30 V, R^G= 25 Ω, V^GS= −20 → 0 V

(TO-263, TO-220SMD)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published July 2002 NS CP(K)

Printed in Japan

D14648EJ3V0DS00 (3rd edition)

The mark ★ shows major revised points.

2000, 2001

12 3 4 5 6 7 8

中文翻译

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