Datasheet > 2SJ605-ZJ

2SJ605-ZJ

更新时间： 2024-11-21 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1542K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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2SJ605-ZJ 数据手册

SMD Type

MOSFET

P-Channel MOSFET

2SJ605-ZJ

■ Features

● VDS (V) =-60V

● ID =-65A

● R^DS(ON)＜ 20mΩ (VGS =-10V)

● R^DS(ON)＜ 31mΩ (VGS =-4V)

● Low Ciss: Ciss = 4600 pF (TYP.)

Drain

Body

Diode

Gate

Protection

Diode

Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-60

Unit

Gate-Source Voltage

±20

-65

Continuous Drain Current

Pulsed Drain Current (Note.1)

Single Avalanche Current (Note.2)

-200

-45

100

Tc = 25℃

Ta = 25℃

Power Dissipation

℃

1.5

Single Avalanche Energy

Junction Temperature

(Note.2)

203

150

Junction Storage Temperature Range

stg

-55 to 150

Note.1: PW ≤ 10us,Duty Cycle ≤ 1%

Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0

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