Datasheet > 2SJ426

2SJ426

更新时间： 2024-02-12 23:08:02

品牌	Logo	应用领域
三垦 - SANKEN		局域网晶体管
页数	文件大小	规格书
58页	737K
描述
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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技术参数
数据手册

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2SJ426 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	外壳连接：	ISOLATED
配置：	SINGLE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	15 A	最大漏源导通电阻：	0.14 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	P-CHANNEL	功耗环境最大值：	35 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ426 数据手册

Tch ( ) = Ta + Pa • rch-c (Tn +T+t₁+ t₂+ t₃)

+ (P₁–Pa) • rch-c (T+t₁+ t₂+ t₃)

– (P₁– P₂) • rch-c (T+t₂+ t₃)

Tch ( ₁) = Ta + Pa • rch-c (Tn +T' +t₁+ t ₂+ t ₃)

+ (P₁–Pa) • rch-c (T' +t₁+ t ₂+ t ₃)

– (P₁– P₂) • rch-c (T '+t₂+ t ₃)

+ (P₃– P₂) • rch-c (T+t₃)

+ (P₃– P₂) • rch-c (T' +t₃)

– P₃• rch-c (T) +P₄• rch-c (t₄+ t₅+ t₆)

– (P₄– P₅) • rch-c (t₅+ t ₆)

+ (P₆– P₅) • rch-c (t₆)

– P₃• rch-c (T') +P₄• rch-c (t₄+ t ₅+ t ₆)

– (P₄– P₅) • rch-c (t₅+ t ₆)

+ (P₆– P₅) • rch-c (t₆)

......................................

: Ambient temperature

This Tch ( ₁) value becomes Tch (start). If the avalanche

energy (EAS = P ₆• t₆) is within the value derated from the

guaranteed EAS value at the temperature, there is no

problem as far as the avalanche energy is concerned.

rch-c (t): Transient thermal resistance at pulse width t

Then calculate the channel temperature Tch ( ₁) imme-

diately before avalanche.

Transient Stationary

Fig. C

Fig. D

P₆

P₃

P₁

P₄

PP₂

P₅

I_D

T(n)

t₁tt₂t₃

t₄t₅t₆

T(n)

Avalanche in this section

Avalanche energy capability measuring method

Fig. 1

(BR) DSS

E_AS

• L • I_Lp

•

– V_DD

(BR) DSS

V_{(BR) DSS}

I_L

V_DS

I_Lp

I_L

R_G

V_DS

V_DD

V_GS

V_DD

(b) Output waveform

(a) Measuring circuit

Switching time measuring method

Fig. 2

Nch

(a) Measuring circuit

(b) Input-output waveform

R_L

90%

V_GS

I_D

V_DS

10%

90%

V_DD

V_GS

R_G

V_DS

10%

t_{d (on)}

t_{d (off)}

t_f

t_r

P.W. 10µs

Duty cycle 1%

t_on

t_off

Fig. 3

P ch

R_L

10%

V_GS

I_D

V_DS

90%

10%

V_DD

R_G

V_DS

V_GS

90%

t_{d (on)}

t_{d (off)}

t_f

t_r

P.W. 10µs

Duty cycle < 1%

t_on

t_off

1...4 5 678 9 10...58

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