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2SJ319(L) PDF预览

2SJ319(L)

更新时间: 2024-01-01 10:33:09
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 87K
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2SJ319(L) 数据手册

 浏览型号2SJ319(L)的Datasheet PDF文件第1页浏览型号2SJ319(L)的Datasheet PDF文件第2页浏览型号2SJ319(L)的Datasheet PDF文件第4页浏览型号2SJ319(L)的Datasheet PDF文件第5页浏览型号2SJ319(L)的Datasheet PDF文件第6页浏览型号2SJ319(L)的Datasheet PDF文件第7页 
2SJ319(L), 2SJ319(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
–50  
–30  
20  
15  
10  
05  
0
–10  
–3  
–1  
Operation in  
this area is  
limited by RDS (on)  
–0.3  
–0.1  
Ta = 25°C  
–0.05  
0
50  
100  
150  
200  
–1  
–3  
–10 –30  
–100 –300500  
Case Temperature Tc (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
–5  
–4  
–3  
–2  
–1  
0
–5  
–4  
–3  
–2  
–1  
0
–10 V  
–8 V  
–6 V  
Tc = –25°C  
25°C  
Pulse Test  
75°C  
–5 V  
–4 V  
VDS = –10 V  
Pulse Test  
VGS = –3.5 V  
0
–4  
–8  
–12  
–16  
–20  
0
–2  
–4  
–6  
–8  
–10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
–20  
10  
Pulse Test  
VGS = –10 V  
Pulse Test  
5
–16  
–12  
–8  
2
1
ID = –5 A  
0.5  
–2 A  
–1 A  
–4  
0.2  
0.1  
0
0
–4  
–8  
–12  
–16  
–20  
–0.2  
–0.5  
–1  
–2  
–5  
–10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 7  

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