Datasheet > 2SJ319(L)|2SJ319(S)

2SJ319(L)|2SJ319(S)

更新时间： 2022-01-19 02:20:00

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2SJ319(L)|2SJ319(S) 数据手册

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2SJ319(L), 2SJ319(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DSS

Ratings

–200

±20

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_GSS

I_D

–3

Drain peak current

I_D(pulse)

–12

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

I_DR

–3

Pch*²

Tch

°C

150

Tstg

–55 to +150

Notes: 1. PW 10 µs, duty cycle 1%

2. Value at T_C= 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V_(BR)DSS–200

—

I_D= –10 mA, V_GS= 0

Gate to source breakdown

voltage

V_(BR)GSS±20

—

I_G= ±100 µA, V_DS= 0

Gate to source leak current

I_GSS

—

1.7

±10

–100

–4.0

2.3

µA

V_GS= ±16 V, V_DS= 0

Zero gate voltage drain current I_DSS

—

V_DS= –160 V, V_GS= 0

I_D= –1 mA, V_DS= –10 V

I_D= –2 A, V_GS= –10 V*¹

Gate to source cutoff voltage

V_GS(off)

–2.0

—

Static drain to source on state R_DS(on)

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

1.0

—

1.7

330

130

—

I_D= –2 A, V_DS= –10 V*¹

V_DS= –10 V, V_GS= 0,

f = 1 MHz

I_D= –2 A, V_GS= –10 V,

R_L= 15

Turn-off delay time

Fall time

t_d(off)

t_f

Body to drain diode forward

voltage

V_DF

–1.15

I_F= –3 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

180

—

I_F= –3 A, V_GS= 0,

di_F/dt = 50 A/µs

Note: 1. Pulse test

123 4 5 6 7...11

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