2SJ278MY

更新时间： 2024-11-09 13:04:27

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

2SJ278MY 数据手册

2SJ278

Silicon P Channel MOS FET

REJ03G0856-0200

(Previous: ADE-208-1190)

Rev.2.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

4 V gate drive device can be driven from 5 V source

Suitable for switching regulator, DC-DC converter

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “MY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
2SJ278MYTL	HITACHI	获取价格	1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ278MYTL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ278MYTR	HITACHI	获取价格	Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ278MYTR	RENESAS	获取价格	1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ278MYTR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ278MYUL	HITACHI	获取价格	1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ278MYUR	HITACHI	获取价格	Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ278MYUR	RENESAS	获取价格	1A, 60V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ278TR	HITACHI	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o
2SJ279	ETC	获取价格