2SJ280(S)TR

更新时间： 2024-02-02 08:59:30

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日立 - HITACHI		/
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2SJ280(S)TR 数据手册

2SJ280 L , 2SJ280 S

Silicon P Channel MOS FET

Application

LDPAK

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

2, 4

• 4 V gate drive device can be driven from

5 V source

• Suitable for Switching regulator, DC – DC

converter

1. Gate

2. Drain

3. Source

4. Drain

• Avalanche Ratings

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

–60

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

–30

———————————————————————————————————————————

Drain peak current

–120

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

–30

———————————————————————————————————————————

Avalanche current

***

–30

———————————————————————————————————————————

Avalanche energy

***

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

*** Value at Tch = 25 °C, Rg ≥ 50 Ω

12 3 4 5 6 7 8

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