2SJ245L

更新时间： 2024-09-16 22:45:07

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
7页	42K
描述
SILICON P-CHANNEL MOS FET

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中文翻译

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数据手册

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2SJ245L 数据手册

2SJ245 L , 2SJ245 S

SILICON P-CHANNEL MOS FET

Application

DPAK–1

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

2, 4

• 4 V Gate drive device can be driven

from 5 V source

• Suitable for Switching regulator, DC – DC

converter

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

–60

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

–5

———————————————————————————————————————————

Drain peak current

–20

D(pulse)

———————————————————————————————————————————

Body–drain diode reverse drain current

–5

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc=25°C

12 3 4 5 6 7

中文翻译

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与2SJ245L相关器件

型号	品牌	获取价格	描述	数据表
2SJ245S	HITACHI	获取价格	SILICON P-CHANNEL MOS FET
2SJ246	HITACHI	获取价格	SILICON P-CHANNEL MOS FET
2SJ246(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 7A I(D) \| TO-251AA
2SJ246(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 7A I(D) \| TO-252AA
2SJ246(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal
2SJ246(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 7A I(D), 30V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal
2SJ246L	HITACHI	获取价格	SILICON P-CHANNEL MOS FET
2SJ246S	HITACHI	获取价格	SILICON P-CHANNEL MOS FET
2SJ247	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ247	HITACHI	获取价格	Silicon P-Channel MOS FET