生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 25 W | 最大脉冲漏极电流 (IDM): | 24 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ264 | SANYO | Very High-Speed Switching Applications |
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|
2SJ265 | SANYO | Very High-Speed Switching Applications |
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|
2SJ266 | SANYO | Very High-Speed Switching Applications |
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|
2SJ266FD | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-263AB |
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|
2SJ267 | SANYO | Very High-Speed Switching Applications |
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|
2SJ268 | SANYO | Very High-Speed Switching Applications |
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