生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.31 |
其他特性: | FAST SWITCHING | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.11 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 72 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ269 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB |
获取价格 |
|
2SJ270 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-220AB |
获取价格 |
|
2SJ271 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-220AB |
获取价格 |
|
2SJ272 | SANYO | Very High-Speed Switching Applications |
获取价格 |
|
2SJ273 | SANYO | Very High-Speed Switching Applications |
获取价格 |
|
2SJ274 | SANYO | Very High-Speed Switching Applications |
获取价格 |