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2SJ256_1 PDF预览

2SJ256_1

更新时间: 2022-12-24 02:15:56
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 95K
描述
Ultrahigh-Speed Switching Applications

2SJ256_1 数据手册

 浏览型号2SJ256_1的Datasheet PDF文件第2页浏览型号2SJ256_1的Datasheet PDF文件第3页浏览型号2SJ256_1的Datasheet PDF文件第4页 
Ordering number:EN4232  
P-Channel Silicon MOSFET  
2SJ256  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· Low-voltage drive.  
· Micaless package facilitating mounting.  
2063A  
[2SJ256]  
4.5  
10.0  
2.8  
3.2  
2.4  
1.6  
1.2  
0.7  
0.75  
1
2
3
1 : Gate  
2.55  
2.55  
2 : Drain  
3 : Source  
2.55  
2.55  
SANYO : TO-220ML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Drain-to-Source Voltage  
V
–30  
±15  
–18  
–72  
2.0  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
A
DP  
W
W
˚C  
˚C  
Allowable Power Dissipation  
P
D
30  
Tc=25°C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–30  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=–1mA, V =0  
V
V
(BR)DSS  
(BR)GSS  
D
G
GS  
=±100µA, V =0  
DS  
±15  
I
V
V
V
V
I
=–30V, V =0  
–100  
±10  
µA  
µA  
V
DSS  
DS  
GS  
I
=±12V, V =0  
DS  
GSS  
GS  
DS  
DS  
V
=–10V, I =–1mA  
D
=–10V, I =–10A  
D
=–10A, V =–10V  
GS  
–1.0  
8.5  
–2.0  
GS(off)  
| yfs |  
Forward Transfer Admittance  
14  
S
R
40  
55  
55  
75  
m  
mΩ  
DS(on)  
DS(on)  
D
Static Drain-to-Source ON-State Resistance  
R
I
=–10A, V =–4V  
GS  
D
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
40199TH (KT)/42893TH (KOTO) AX-8376 No.4232–1/4  

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