生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.3 |
配置: | SINGLE | FET 技术: | JUNCTION |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 子类别: | FET General Purpose Small Signal |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ107V | ETC |
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TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK | |
2SJ107-V | TOSHIBA |
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暂无描述 | |
2SJ108 | TOSHIBA |
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P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) | |
2SJ108_07 | TOSHIBA |
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Low Noise Audio Amplifier Applications | |
2SJ108BL | ETC |
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TRANSISTOR | JFET | P-CHANNEL | 6MA I(DSS) | SPAK | |
2SJ108-BL | TOSHIBA |
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TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Sig | |
2SJ108GR | ETC |
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TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK | |
2SJ108V | ETC |
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TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK | |
2SJ109 | TOSHIBA |
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P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS) | |
2SJ109BL | ETC |
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TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP |