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2SD2386-B PDF预览

2SD2386-B

更新时间: 2024-02-07 18:43:50
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
4页 168K
描述
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power

2SD2386-B 技术参数

是否无铅: 含铅生命周期:Active
针数:3Reach Compliance Code:unknown
风险等级:5.26外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:140 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):9000
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:70 W
认证状态:Not Qualified表面贴装:NO
端子面层:NOT SPECIFIED端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzVCEsat-Max:2.5 V
Base Number Matches:1

2SD2386-B 数据手册

 浏览型号2SD2386-B的Datasheet PDF文件第1页浏览型号2SD2386-B的Datasheet PDF文件第3页浏览型号2SD2386-B的Datasheet PDF文件第4页 
2SD2386  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 140 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
5.0  
5.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I
C
= 50 mA, I = 0  
140  
(BR) CEO  
B
h
FE (1)  
V
CE  
= 5 V, I = 6 A  
5000  
30000  
C
DC current gain  
(Note)  
h
V
= 5 V, I = 10 A  
2000  
30  
90  
2.5  
3.0  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 6 A, I = 6 mA  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 5 V, I = 6 A  
C
Transition frequency  
f
= 5 V, I = 1 A  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
E
Note: h  
classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000  
FE (1)  
Marking  
TOSHIBA  
D2386  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
2
2004-07-07  

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