Datasheet > 2SD2374P

2SD2374P

更新时间： 2024-11-24 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220VAR

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中文翻译

获取价格

数据手册

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2SD2374P 数据手册

Power Transistors

2SD2374, 2SD2374A

Silicon NPN triple diffusion planar type

Unit: mm

4.6±±.ꢀ

For power amplification

9.9±±.ꢁ

ꢀ.9±±.ꢀ

Complementary to 2SB1548 and 2SB1548A

φ ꢁ.ꢀ±±.1

I Features

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

•

Low collector to emitter saturation voltage V_CE(sat)

Full-pack package which can be installed to the heat sink with one

screw

1.4±±.ꢀ

1.6±±.ꢀ

ꢀ.6±±.1

I Absolute Maximum Ratings T_C= 25°C

±.8±±.1

±.55±±.15

Parameter

Symbol

Rating

Unit

2SD2374

2SD2374A

2SD2374

2SD2374A

V_CBO

ꢀ.54±±.ꢁ±

5.±8±±.5±

Collector to base

voltage

ꢀ

ꢁ

1: Base

2: Collector

3: Emitter

V_CEO

Collector to

emitter voltage

TO-220D Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

200

300

Unit

2SD2374

2SD2374A

2SD2374

2SD2374A

I_CES

V_CE= 60 V, V_BE= 0

V_CE= 80 V, V_BE= 0

V_CE= 30 V, I_B= 0

µA

Collector cutoff

current

I_CEO

µA

Emitter cutoff

current

V_CE= 60 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= 6 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio

V_CEO

I_C= 30 mA, I_B= 0

h_FE1

V_CE= 4 V, I_C= 1 A

V_CE= 4 V, I_C= 3 A

I_C= 3 A, I_B= 0.375 A

V_CE= 10 V, I_C= 0.5 A, f = 10 MHz

I_C= 1 A, I_B1= 0.1 A, I_B2= − 0.1 A,

V_CC= 50 V

250

h_FE2

V_BE

V_CE(sat)

f_T

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

1.8

1.2

0.5

2.5

0.4

MHz

µs

t_on

Storage time

t_stg

µs

Fall time

t_f

µs

Note) : Rank classification

Rank

h_FE1

70 to 150

120 to 250

12 3

中文翻译

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与2SD2374P相关器件

型号	品牌	获取价格	描述	数据表
2SD2374Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220VAR
2SD2375	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For power amplification with high forward current
2SD2375A	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2375P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD2375PQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD2375Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB
2SD2382	SANKEN	获取价格	Power Transistor
2SD2383	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING
2SD2383-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
2SD2383-T1B	RENESAS	获取价格	2SD2383-T1B