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2SD2374A PDF预览

2SD2374A

更新时间: 2024-11-08 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 48K
描述
Silicon PNP epitaxial planar type(For power amplification)

2SD2374A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.76外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Bismuth (Sn/Bi)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SD2374A 数据手册

 浏览型号2SD2374A的Datasheet PDF文件第2页 
Power Transistors  
2SB1548, 2SB1548A  
Silicon PNP epitaxial planar type  
For power amplification  
Complementary to 2SD2374 and 2SD2374A  
Unit: mm  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector to emitter saturation voltage VCE(sat)  
4.6±0.2  
Full-pack package which can be installed to the heat sink with  
9.9±0.3  
2.9±0.2  
one screw  
Absolute Maximum Ratings (T =25˚C)  
C
φ3.2±0.1  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SB1548  
2SB1548A  
2SB1548  
–60  
VCBO  
V
1.4±0.2  
2.6±0.1  
base voltage  
Collector to  
–80  
1.6±0.2  
–60  
0.8±0.1  
0.55±0.15  
VCEO  
V
emitter voltage 2SB1548A  
Emitter to base voltage  
Peak collector current  
Collector current  
–80  
2.54±0.3  
3
5.08±0.5  
VEBO  
ICP  
–5  
V
A
A
1
2
–5  
IC  
–3  
1:Base  
2:Collector  
3:Emitter  
Collector power TC=25°C  
25  
PC  
W
dissipation  
Ta=25°C  
2
TO–220D Full Pack Package  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICES  
Conditions  
min  
max  
–200  
–200  
–300  
–300  
–1  
typ  
Unit  
2SB1548  
2SB1548A  
2SB1548  
2SB1548A  
VCE = –60V, VBE = 0  
µA  
current  
VCE = –80V, VBE = 0  
VCE = –30V, IB = 0  
VCE = –60V, IB = 0  
VEB = –5V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
µA  
mA  
V
Emitter cutoff current  
Collector to emitter 2SB1548  
voltage 2SB1548A  
–60  
–80  
70  
IC = –30mA, IB = 0  
*
hFE1  
VCE = –4V, IC = –1A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
VCE = –4V, IC = –3A  
10  
VCE = –4V, IC = –3A  
–1.8  
–1.2  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = –3A, IB = – 0.375A  
VCE = –10V, IC = – 0.5A, f = 10MHz  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
30  
0.5  
1.2  
0.3  
MHz  
µs  
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.  
1

2SD2374A 替代型号

型号 品牌 替代类型 描述 数据表
2SD2374 PANASONIC

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