5秒后页面跳转
2SD2374A PDF预览

2SD2374A

更新时间: 2024-11-24 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 48K
描述
Silicon PNP epitaxial planar type(For power amplification)

2SD2374A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.76外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Bismuth (Sn/Bi)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2SD2374A 数据手册

 浏览型号2SD2374A的Datasheet PDF文件第2页 
Power Transistors  
2SB1548, 2SB1548A  
Silicon PNP epitaxial planar type  
For power amplification  
Complementary to 2SD2374 and 2SD2374A  
Unit: mm  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector to emitter saturation voltage VCE(sat)  
4.6±0.2  
Full-pack package which can be installed to the heat sink with  
9.9±0.3  
2.9±0.2  
one screw  
Absolute Maximum Ratings (T =25˚C)  
C
φ3.2±0.1  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SB1548  
2SB1548A  
2SB1548  
–60  
VCBO  
V
1.4±0.2  
2.6±0.1  
base voltage  
Collector to  
–80  
1.6±0.2  
–60  
0.8±0.1  
0.55±0.15  
VCEO  
V
emitter voltage 2SB1548A  
Emitter to base voltage  
Peak collector current  
Collector current  
–80  
2.54±0.3  
3
5.08±0.5  
VEBO  
ICP  
–5  
V
A
A
1
2
–5  
IC  
–3  
1:Base  
2:Collector  
3:Emitter  
Collector power TC=25°C  
25  
PC  
W
dissipation  
Ta=25°C  
2
TO–220D Full Pack Package  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICES  
Conditions  
min  
max  
–200  
–200  
–300  
–300  
–1  
typ  
Unit  
2SB1548  
2SB1548A  
2SB1548  
2SB1548A  
VCE = –60V, VBE = 0  
µA  
current  
VCE = –80V, VBE = 0  
VCE = –30V, IB = 0  
VCE = –60V, IB = 0  
VEB = –5V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
µA  
mA  
V
Emitter cutoff current  
Collector to emitter 2SB1548  
voltage 2SB1548A  
–60  
–80  
70  
IC = –30mA, IB = 0  
*
hFE1  
VCE = –4V, IC = –1A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
VCE = –4V, IC = –3A  
10  
VCE = –4V, IC = –3A  
–1.8  
–1.2  
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = –3A, IB = – 0.375A  
VCE = –10V, IC = – 0.5A, f = 10MHz  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
30  
0.5  
1.2  
0.3  
MHz  
µs  
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.  
1

2SD2374A 替代型号

型号 品牌 替代类型 描述 数据表
2SD2374 PANASONIC

类似代替

Silicon NPN triple diffusion planar type(For power amplification)
2SD1889 ROHM

功能相似

Power Transistor (120V, -6A)
2SD1855 ROHM

功能相似

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

与2SD2374A相关器件

型号 品牌 获取价格 描述 数据表
2SD2374AP PANASONIC

获取价格

Silicon NPN triple diffusion planar type
2SD2374AQ ETC

获取价格

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220VAR
2SD2374P ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR
2SD2374Q ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR
2SD2375 PANASONIC

获取价格

Silicon NPN triple diffusion planar type(For power amplification with high forward current
2SD2375A PANASONIC

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SD2375P ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SD2375PQ ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SD2375Q ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SD2382 SANKEN

获取价格

Power Transistor