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2SD2374/2SD2374A PDF预览

2SD2374/2SD2374A

更新时间: 2024-11-24 23:20:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
2SD2374. 2SD2374A - NPN Transistor

2SD2374/2SD2374A 数据手册

 浏览型号2SD2374/2SD2374A的Datasheet PDF文件第2页浏览型号2SD2374/2SD2374A的Datasheet PDF文件第3页 
Power Transistors  
2SD2374, 2SD2374A  
Silicon NPN triple diffusion planar type  
Unit: mm  
4.6±±.ꢀ  
For power amplification  
9.9±±.ꢁ  
ꢀ.9±±.ꢀ  
Complementary to 2SB1548 and 2SB1548A  
φ ꢁ.ꢀ±±.1  
I Features  
High forward current transfer ratio hFE which has satisfactory  
linearity  
Low collector to emitter saturation voltage VCE(sat)  
Full-pack package which can be installed to the heat sink with one  
screw  
1.4±±.ꢀ  
1.6±±.ꢀ  
ꢀ.6±±.1  
I Absolute Maximum Ratings TC = 25°C  
±.8±±.1  
±.55±±.15  
Parameter  
Symbol  
Rating  
Unit  
2SD2374  
2SD2374A  
2SD2374  
2SD2374A  
VCBO  
60  
V
ꢀ.54±±.ꢁ±  
5.±8±±.5±  
Collector to base  
voltage  
80  
1
1: Base  
2: Collector  
3: Emitter  
VCEO  
60  
V
Collector to  
emitter voltage  
80  
TO-220D Package  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
6
V
A
5
3
A
TC = 25°C  
Ta = 25°C  
PC  
25  
W
Collector power  
dissipation  
2
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
200  
200  
300  
300  
1
Unit  
2SD2374  
2SD2374A  
2SD2374  
2SD2374A  
ICES  
VCE = 60 V, VBE = 0  
VCE = 80 V, VBE = 0  
VCE = 30 V, IB = 0  
µA  
Collector cutoff  
current  
ICEO  
µA  
Emitter cutoff  
current  
VCE = 60 V, IB = 0  
Emitter cutoff current  
IEBO  
VEB = 6 V, IC = 0  
mA  
V
Collector to emitter voltage  
Forward current transfer ratio  
VCEO  
IC = 30 mA, IB = 0  
60  
70  
10  
*
hFE1  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 3 A  
VCE = 4 V, IC = 3 A  
IC = 3 A, IB = 0.375 A  
VCE = 10 V, IC = 0.5 A, f = 10 MHz  
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A,  
VCC = 50 V  
250  
hFE2  
VBE  
VCE(sat)  
fT  
Base to emitter voltage  
Collector to emitter saturation voltage  
Transition frequency  
Turn-on time  
1.8  
1.2  
V
V
30  
0.5  
2.5  
0.4  
MHz  
µs  
ton  
Storage time  
tstg  
µs  
Fall time  
tf  
µs  
Note) : Rank classification  
*
Rank  
Q
P
hFE1  
70 to 150  
120 to 250  
1

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