Datasheet > 2SD2353_06

2SD2353_06

更新时间： 2024-11-21 04:26:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	137K
描述
Silicon NPN Triple Diffused Type

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2SD2353_06 数据手册

2SD2353

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2353

Power Amplifier Applications

Unit: mm

•

High DC current gain: h

= 800 to 3200

Low collector saturation voltage: V

= 0.4 V (typ.)

CE (sat)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Pulse

0.6

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

SC-67

2-10R1A

Storage temperature range

stg

−55 to 150

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.7 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-21

12 3 4 5

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