Datasheet > 2SD2357

2SD2357

更新时间： 2024-11-06 06:23:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
1页	49K
描述
Silicon NPN Epitaxial Planar Type

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中文翻译

获取价格

数据手册

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2SD2357 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial Planar Type

2SD2357

Features

Low collector-emitter saturation voltage VCE(sat).

Large collector power dissipation PC.

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

1.2

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = 7 V, IE = 0

Min

Typ

Max

Unit

ìA

Collector-base cutoff current

Collector-base voltage

I^CBO

V^CBO

V^CEO

V^EBO

h^FE

IC = 10 ìA, IE = 0

IC = 1 mA, IB = 0

Collector-emitter voltage

Emitter-base voltage

IE = 10 ìA, IC = 0

VCE = 2 V, IC = 100 mA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

200

800

V^CE(sat)IC = 500 mA, IB = 5 mA

0.15

f^T

VCB = 5 V, IE = -50 mA, f = 200 MHz

V^CB= 5 V, IE = 0, f = 1 MHz

120

MHz

Collector output capacitance

Cob

Marking

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与2SD2357相关器件

型号	品牌	获取价格	描述	数据表
2SD2357H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
2SD2357TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
2SD2358	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency output amplification)
2SD2358-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
2SD2359	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency amplification)
2SD2359	KEXIN	获取价格	Silicon NPN Epitaxial Planar Type
2SD2359	TYSEMI	获取价格	Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downs
2SD2359H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2359TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD235G	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 3A I(C) \| TO-220AB