2SD2359

更新时间： 2024-11-04 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		/
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描述
Silicon NPN epitaxial planer type(For low-frequency amplification)

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2SD2359 数据手册

Transistor

2SD2359

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

45°

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

3.0±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

marking

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1:Base

1.2

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1O

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 14V, I_E= 0

_C= 10µA, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

h_FE

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

V_CE= 2V, I_C= 100mA

200

800

0.2

Collector to emitter saturation voltage V_CE(sat)

I_C= 500mA, I_B= 10mA

0.11

100

MHz

Transition frequency

f_T

V_CB= 6V, I_E= –50mA, f = 200MHz

Collector output capacitance

C_ob

V_CB= 6V, I_E= 0, f = 1MHz

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