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2SD1974ESUR

更新时间： 2024-01-12 10:22:53

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2SD1974ESUR 数据手册

2SD1974

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.8

Collector peak current

E to C diode forward current

Collector power dissipation

Junction temperature

Storage temperature

ic _(peak)

1.5

I_D

0.6

P_C*¹

1.0

°C

150

Tstg

–55 to +150

Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

—

I_C= 10 µA, I_E= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

I_C= 1 mA, R_BE= ∞

Collector to emitter sustaining V_CEO(sus)

voltage

I_C= 0.8 A, R_BE= ∞,

L = 20 mH

Emitter to base breakdown

voltage

V_(BR)EBO

I_E= 10 µA, I_C= 0

Collector cutoff current

I_CBO

I_CEO

I_EBO

h_FE

—

0.2

µA

V_CB= 20 V, I_E= 0

—

0.5

V_CE= 20 V, R_BE= ∞

Emitter cutoff current

—

0.2

V_EB= 5 V, I_C= 0

DC current transfer ratio

250

—

1200

0.4

V_CE= 2 V, I_C= 0.1 A*¹

I_C= 0.8 A, I_B= 80 mA*¹

Collector to emitter saturation V_CE(sat)

voltage

E to C diode forward voltage

V_D

—

1.5

I_D= 0.6 A*¹

Notes: 1. Pulse test

2. Marking is “ES”.

123 4 5 6 7

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