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2SD1975 PDF预览

2SD1975

更新时间: 2024-11-20 05:56:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 104K
描述
Silicon NPN Power Transistors

2SD1975 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD1975 数据手册

 浏览型号2SD1975的Datasheet PDF文件第2页浏览型号2SD1975的Datasheet PDF文件第3页浏览型号2SD1975的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1975 2SD1975A  
DESCRIPTION  
·With TO-3PL package  
·Complement to type 2SB1317/1317A  
·Wide area of safe operation  
·High transition frequency fT  
APPLICATIONS  
·For high power amplification  
·Optimum for the output stage of a  
Hi-Fi audio amplifier  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PL) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
180  
200  
180  
200  
5
UNIT  
2SD1975  
2SD1975A  
2SD1975  
2SD1975A  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
15  
ICM  
Collector current-peak  
25  
Ta=25  
TC=25℃  
3.5  
PC  
Collector power dissipation  
W
150  
150  
-55~150  
Tj  
Junction temperature  
Storage temperature  
Tstg  

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