Datasheet > 2SD1949

2SD1949

更新时间： 2024-10-14 05:57:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	138K
描述
NPN Silicon General Purpose Transistor

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中文翻译

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数据手册

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2SD1949 数据手册

2SD1949

NPN Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

FEATURES

SOT-323

Min

Dim

Max

* High current.(IC=5A)

1.800 2.200

1.150 1.350

0.800 1.000

0.300 0.400

1.200 1.400

0.000 0.100

0.100 0.250

0.350 0.500

0.590 0.720

2.000 2.400

0.280 0.420

* Low saturation voltage, typically

VCE(sat)=0.1V at IC / IB=150mA / 15mA

Top View

COLLECTOR

BASE

EMITTER

All Dimension in mm

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

500

200

150

-55-150

℃

P_C

T_J

Junction Temperature

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test conditions

I_C= 100µA , I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA , I_B=0

I_E= 100µA, I_C=0

V_CB= 30 V, I_E=0

V_EB=4V, I_C=0

0.5

390

0.4

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=3V, I_C=10mA

I_C= 150mA, I_B=15mA

120

Collector-emitter saturation voltage

V_CE(sat)

_CE=5V, I_C=20mA

Transition frequency

f_T

250

6.5

MHz

f=100 MHz

Output capacitance

CLASSIFICATION OF h_FE

Rank

C_ob

V_CB=10V, I_E=0,f=1 MHz

Range

120-270

180-390

Marking

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

中文翻译

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