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2SD1949T106 PDF预览

2SD1949T106

更新时间: 2024-02-16 21:49:46
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 61K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

2SD1949T106 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:1.05
Samacsys Confidence:4Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/471528.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=471528
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=4715283D View:https://componentsearchengine.com/viewer/3D.php?partID=471528
Samacsys PartID:471528Samacsys Image:https://componentsearchengine.com/Images/9/2SD1949T106R.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/2SD1949T106R.jpgSamacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:UMT3_1Samacsys Released Date:2017-12-08 12:37:46
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2SD1949T106 数据手册

 浏览型号2SD1949T106的Datasheet PDF文件第2页浏览型号2SD1949T106的Datasheet PDF文件第3页 
2SD1949/2SD1484K  
Transistors  
Medium Power Transistor (50V,0.5A)  
2SD1949/2SD1484K  
Features  
1) High current.(IC=0.5A)  
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.  
Absolute maximum rationgs (Ta=25 C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
Unit  
V
50  
50  
V
5
0.5  
V
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.2  
W
C
Tj  
150  
Tstg  
55 to +150  
C
Electrical characteristics (Ta=25 C)  
Parameter  
Symbol  
Min.  
50  
50  
5
Typ.  
250  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector outoff current  
V
V
IC  
=
100µA  
1mA  
IC  
=
IE  
=
100µA  
V
0.5  
0.5  
390  
0.4  
VCB  
=
=
30V  
µA  
µA  
IEBO  
Emitter cutoff current  
VEB  
4V  
hFE  
DC current rransfer ratio  
120  
VCE/IC  
IC/IB 150mA/15mA  
5V , IE 20mA , f  
10V , IE 0A , f 1MHz  
=
3V/10mA  
VCE(sat)  
fT  
Collector-emitter saturation voltage  
Transition frequency  
V
=
MHz VCE  
pF VCB  
=
=
=
=
100MHz  
Output capacitance  
Cob  
6.5  
=
=
Packaging specifications and hFE  
Type  
Package  
hFE  
2SD1949  
UMT3  
QR  
2SD1484K  
SMT3  
QR  
Marking  
Code  
Y
Y
T106  
3000  
T146  
3000  
Basic ordering unit (pleces)  
Danotes hFE  
hFE values are classified as follows :  
Item  
hFE  
Q
R
120 to 270 180 to 390  
Rev.D  
1/2  

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