Datasheet > 2SD1898

2SD1898

更新时间： 2024-09-28 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	51K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SD1898 数据手册

SMD Type

Transistors

Power Transistor

2SD1898

Features

High VCEO, VCEO=80V .

High IC, IC=1A (DC) .

Good hFE linearity .

Low VCE (sat) .

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

120

V^CEO

V^EBO

I^C

Collector current

I^C(Pulse) *¹

P^C

0.5

Collector power dissipation

P^C

T^j

Junction temperature

Storage temperature

150

Tstg

-55 to +150

*1. Pw=20ms.

*2. 40X40X0.7mm Ceramic board.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

120

Typ

Max

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

BV^CBOIC=50ìA

BV^CEOIC=1mA

BV^EBOIE=50ìA

Collector cutoff current

Emitter cutoff current

I^CBO

I^EBO

h^FE

VCB=100V

VEB=4V

VCE=3V,IC=0.5A

ìA

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

390

0.4

V^CE(sat)IC=500mA,IB=20mA

0.15

100

f^T

VCE=10V, IE= -50mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

MHz

Output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

82 180

120 270

180 390

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