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2SD1791 PDF预览

2SD1791

更新时间: 2024-11-24 06:20:23
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无锡固电 - ISC 晶体晶体管斩波器局域网
页数 文件大小 规格书
2页 218K
描述
Silicon NPN Darlington Power Transistor

2SD1791 数据手册

 浏览型号2SD1791的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD1791  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 100V (Min.)  
·High Switching Speed  
APPLICATIONS  
·Designed for audio frequency power amplifier and low  
speed high current switching industrial use.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VALUE  
100  
100  
7
UNIT  
V
V
V
Collector Current-Continunous  
Collector Current-Peak  
Base Current-Continunous  
Base Current-Peak  
7
A
ICM  
10  
A
IB  
0.5  
A
IBM  
1.0  
A
Collector Power Dissipation  
@TC=25  
PC  
30  
W
Tj  
Junction Temperature  
150  
-55~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
4.17  
/W  
Thermal Resistance, Junction to Case  
Rth j-c  
isc Websitewww.iscsemi.cn  

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