Datasheet > 2SD1791

2SD1791

更新时间： 2024-11-05 06:20:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管斩波器局域网
页数	文件大小	规格书
2页	218K
描述
Silicon NPN Darlington Power Transistor

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2SD1791 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1791

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 100V (Min.)

·High Switching Speed

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

VALUE

100

UNIT

Collector Current-Continunous

Collector Current-Peak

Base Current-Continunous

Base Current-Peak

I_CM

I_B

0.5

I_BM

1.0

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

-55~150

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

4.17

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

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