Datasheet > 2SD1792

2SD1792

更新时间： 2024-11-04 22:52:47

品牌	Logo	应用领域
新电元 - SHINDENGEN		晶体晶体管达林顿晶体管
页数	文件大小	规格书
9页	312K
描述
Darlington Transistor(7A NPN)

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中文翻译

获取价格

数据手册

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2SD1792 数据手册

SHINDENGEN

Darlington Transistor

OUTLINE DIMENSIONS

2SD1792

Case : ITO-220

(TP7L20)

Unit : mm

7A NPN

RATINGS

●Absolute Maximum Ratings

Item

Storage Temperature

Conditions

Symbol

Tstg

V_CBO

V_CEO

V_EBO

Ratings

-55～+150

Unit

℃

Junction Temperature

+150

200

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

Collector Current Peak

Base Current DC

0.5

1.0

Base Current Peak

Total Transistor Dissipation

Dielectric Strength

P_T

Tc = 25℃

0.5

N･m

Terminals to case AC 1 minute

(Recommended torque : 0.3N･m）

Vdis

TO R

M ounting Torque

●Electrical Characteristics (Tc=25℃)

Item

Symbol

Conditions

V_CB= 200V

Ratings

M ax 0.1

M ax 5

Unit

Collector Cutoff Current

CBO

V_CE= 200V

CEO

Emitter Cutoff Current

DC Current Gain

V_EB= 7V

EBO

h_FE

V_CE= 3V, I = 3A

M in 1,500

M ax 30,000

M ax 1.5

M ax 2.0

Collector to Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

θjc

I = 3A

Base to Emitter Saturation Voltage

Thermal Resistance

I = 5mA

Junction to case

M ax 4.16 ℃/W

M Hz

Transition Frequency

Turn on Time

V_CE= 10V, I_C= 0.7A

ton

TYP 20

M ax 2

I = 3A

Storage Time

Fall Time

I = I = 5mA

M ax 12

M ax 5

μs

R_L= 10Ω

V_BB2= 4V

12 3 4 5 6 7...9

中文翻译

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