2SD1794

更新时间： 2024-11-20 07:31:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	91K
描述
isc Silicon NPN Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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2SD1794 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

2SD1794 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1794

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 200V (Min.)

·High Switching Speed

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

VALUE

200

UNIT

Collector Current-Continunous

Collector Current-Peak

Base Current-Continunous

Base Current-Peak

I_CM

I_B

0.5

I_BM

1.0

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

-55~150

T_stg

Storage Temperature Range

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

2.5

℃/W

Thermal Resistance, Junction to Case

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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