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2SD1794 PDF预览

2SD1794

更新时间: 2024-11-05 07:31:31
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 91K
描述
isc Silicon NPN Darlington Power Transistor

2SD1794 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

2SD1794 数据手册

 浏览型号2SD1794的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
2SD1794  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 200V (Min.)  
·High Switching Speed  
APPLICATIONS  
·Designed for audio frequency power amplifier and low  
speed high current switching industrial use.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VALUE  
200  
200  
7
UNIT  
V
V
V
Collector Current-Continunous  
Collector Current-Peak  
Base Current-Continunous  
Base Current-Peak  
10  
A
ICM  
15  
A
IB  
0.5  
A
IBM  
1.0  
A
Collector Power Dissipation  
@TC=25  
PC  
50  
W
Tj  
Junction Temperature  
150  
-55~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
2.5  
/W  
Thermal Resistance, Junction to Case  
Rth j-c  
isc Websitewww.iscsemi.cn  

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