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2SD1796 PDF预览

2SD1796

更新时间: 2024-11-23 22:52:47
品牌 Logo 应用领域
三垦 - SANKEN 晶体继电器晶体管功率双极晶体管开关电机驱动局域网
页数 文件大小 规格书
1页 29K
描述
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

2SD1796 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FM20, TO-220F, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.83Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR外壳连接:ISOLATED
最大集电极电流 (IC):4 A集电极-发射极最大电压:50 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

2SD1796 数据手册

  
C
E
Equivalent  
circuit  
B
Built-in Avalanche Diode  
for Surge Absorbing  
Darlington  
2 S D1 7 9 6  
(3k)(150)  
Silicon NPN Triple Diffused Planar Transistor  
Application : Driver for Solenoid, Relay and Motor and General Purpose  
External Dimensions FM20(TO220F)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
(Ta=25°C)  
Symbol  
ICBO  
2SD1796  
10max  
10max  
60±10  
2000min  
1.5max  
60typ  
Symbol  
2SD1796  
Conditions  
Unit  
µA  
m A  
V
Unit  
V
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
2.8  
VCBO  
VCEO  
VEBO  
IC  
60±10  
VCB=50V  
IEBO  
60±10  
VEB=6V  
V
V(BR)CEO  
hFE  
IC=10mA  
6
V
±0.2  
ø3.3  
a
b
VCE=4V, IC=3A  
IC=3A, IB=10mA  
VCE=12V, IE=0.2A  
VCB=10V, f=1MHz  
4
0.5  
A
VCE(sat)  
fT  
V
MHz  
pF  
IB  
A
PC  
25(Tc=25°C)  
150  
W
°C  
°C  
±0.15  
1.35  
COB  
45 typ  
Tj  
±0.15  
1.35  
Tstg  
–55 to +150  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
Weight : Approx 2.0g  
a. Type No.  
b. Lot No.  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
ton  
tstg  
tf  
()  
(A)  
(V)  
(mA)  
(µs)  
(µs)  
(mA)  
(µs)  
B
C E  
30  
10  
3
10  
–5  
10  
–10  
1.0typ  
4.0typ  
1.5typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=2V)  
3
4
3
2
1
0
4
3
2
1
0
2
1
0
0.3mA  
0
1
2
3
4
0.2  
0.5  
1
5
10  
50 100  
0
1
2
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
(VCE=4V)  
5
20000  
20000  
10000  
5000  
10000  
5000  
Typ  
1000  
500  
1000  
500  
1
VCB=10V  
IE=–2V  
100  
50  
100  
50  
0.5  
1
10  
100  
1000  
0.05  
0.1  
0.5  
1
4
0.05  
0.1  
0.5  
1
4
Time t(ms)  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=10V)  
30  
20  
10  
10  
5
120  
Natural Cooling  
Silicone Grease  
Heatsink: Aluminum  
in mm  
100  
80  
1
Typ  
60  
150x150x2  
100x  
0.5  
40  
Without Heatsink  
Natural Cooling  
50x50x2  
20  
0
0.1  
Without Heatsink  
2
0
0.05  
–0.01  
–0.1  
–1  
–4  
3
5
50  
100  
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
138  

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