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2SD1795 PDF预览

2SD1795

更新时间: 2024-11-04 22:52:47
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体晶体管达林顿晶体管
页数 文件大小 规格书
9页 315K
描述
Darlington Transistor(10A NPN)

2SD1795 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.78外壳连接:ISOLATED
最大集电极电流 (IC):10 A集电极-发射极最大电压:400 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):150
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
湿度敏感等级:2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN功耗环境最大值:50 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:CHOPPER晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHz最大关闭时间(toff):30000 ns
最大开启时间(吨):2000 nsVCEsat-Max:1.5 V
Base Number Matches:1

2SD1795 数据手册

 浏览型号2SD1795的Datasheet PDF文件第2页浏览型号2SD1795的Datasheet PDF文件第3页浏览型号2SD1795的Datasheet PDF文件第4页浏览型号2SD1795的Datasheet PDF文件第5页浏览型号2SD1795的Datasheet PDF文件第6页浏览型号2SD1795的Datasheet PDF文件第7页 
SHINDENGEN  
Darlington Transistor  
OUTLINE DIMENSIONS  
2SD1795  
Case : ITO-220  
(TP10K40)  
Unit : mm  
10A NPN  
RATINGS  
Absolute Maximum Ratings  
Item  
Symbol  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
Conditions  
Ratings  
Unit  
Storage Temperature  
Junction Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
-55~+150  
+150  
500  
V
V
V
400  
12  
10  
I
A
C
Collector Current Peak  
Base Current DC  
I
I
15  
0.5  
1.0  
A
A
A
W
CP  
B
Base Current Peak  
I
BP  
Total Transistor Dissipation  
Tc = 25℃  
PT  
Vdis  
TO R  
50  
2
0.5  
Dielectric Strength  
M ounting Torque  
Terminals to case AC 1 minute  
(Recommended torque : 0.3Nm)  
kV  
Nm  
●Electrical Characteristics (Tc=25℃)  
Item  
Symbol  
VCEO  
Conditions  
VCE (Clamp)  
VCB = 500V  
Ratings  
M in 400  
M ax 0.1  
M ax 0.1  
M ax 100  
M in 150  
M ax 1.5  
M ax 2.0  
M ax 2.5  
TYP 10  
M ax 2  
Unit  
V
Collector to Emitter Sustaining Voltage  
Collector Cutoff Current  
I
mA  
CBO  
I
VCE = 400V  
CEO  
Emitter Cutoff Current  
VEB = 12V  
I
EBO  
mA  
DC Current Gain  
hFE  
VCE = 2V, I = 7A  
C
Collector to Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
θjc  
I = 7A  
C
V
V
Base to Emitter Saturation Voltage  
Thermal Resistance  
I = 70mA  
B
Junction to case  
℃/W  
M Hz  
Transition Frequency  
Turn on Time  
f
VCE = 10V, IC = 1A  
T
ton  
I = 7A  
C
Storage Time  
Fall Time  
ts  
I = I = 70mA  
B2  
M ax 15  
M ax 15  
μs  
B1  
RL = 10Ω  
VBB2 = 4V  
tf  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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