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2SD1793 PDF预览

2SD1793

更新时间: 2024-11-04 22:52:47
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体晶体管达林顿晶体管斩波器局域网
页数 文件大小 规格书
9页 316K
描述
Darlington Transistor(10A NPN)

2SD1793 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.85Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):1500JESD-30 代码:R-PSFM-T3
JESD-609代码:e0湿度敏感等级:2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240极性/信道类型:NPN
功耗环境最大值:50 W最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:CHOPPER
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
最大关闭时间(toff):17000 ns最大开启时间(吨):2000 ns
VCEsat-Max:1.5 VBase Number Matches:1

2SD1793 数据手册

 浏览型号2SD1793的Datasheet PDF文件第2页浏览型号2SD1793的Datasheet PDF文件第3页浏览型号2SD1793的Datasheet PDF文件第4页浏览型号2SD1793的Datasheet PDF文件第5页浏览型号2SD1793的Datasheet PDF文件第6页浏览型号2SD1793的Datasheet PDF文件第7页 
SHINDENGEN  
Darlington Transistor  
OUTLINE DIMENSIONS  
2SD1793  
Case : ITO-220  
(TP10L10)  
Unit : mm  
10A NPN  
RATINGS  
Absolute Maximum Ratings  
Item  
Storage Temperature  
Conditions  
Symbol  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
Ratings  
-55~+150  
Unit  
V
V
V
Junction Temperature  
+150  
100  
100  
7
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
I
10  
A
C
Collector Current Peak  
Base Current DC  
I
I
15  
0.5  
1.0  
A
A
A
CP  
B
Base Current Peak  
I
BP  
Total Transistor Dissipation  
Dielectric Strength  
PT  
Tc = 25℃  
50  
2
0.5  
W
kV  
Nm  
Terminals to case AC 1 minute  
(Recommended torque : 0.3Nm)  
Vdis  
TO R  
M ounting Torque  
●Electrical Characteristics (Tc=25℃)  
Item  
Symbol  
Conditions  
VCB = 100V  
Ratings  
M ax 0.1  
M ax 0.1  
M ax 5  
Unit  
Collector Cutoff Current  
I
mA  
CBO  
I
VCE = 100V  
CEO  
Emitter Cutoff Current  
DC Current Gain  
I
VEB = 7V  
mA  
EBO  
hFE  
VCE = 3V, I = 5A  
C
M in 1,500  
M ax 30,000  
M ax 1.5  
M ax 2.0  
M ax 2.5  
TYP 20  
M ax 2  
Collector to Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
θjc  
I = 5A  
C
V
V
Base to Emitter Saturation Voltage  
Thermal Resistance  
I = 10mA  
B
Junction to case  
℃/W  
M Hz  
Transition Frequency  
Turn on Time  
VCE = 10V, IC = 1A  
f
ton  
T
I = 5A  
C
Storage Time  
Fall Time  
ts  
I = 5mA, I = 10mA  
B2  
M ax 12  
M ax 5  
μs  
B1  
RL = 6Ω  
tf  
VBB2 = 4V  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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