Datasheet > 2SD1792

2SD1792

更新时间： 2024-11-24 07:31:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD1792 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1792

DESCRIPTION

·With ITO-220 package

·Switching power transistor

·DARLINGTON

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (ITO-220) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

200

UNIT

Open base

Open collector

I_CM

Collector current-Peak

Base current

I_B

0.5

I_BM

Base current-Peak

1.0

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-C}

4.16

℃/W

12 3

中文翻译

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