Datasheet > 2SD1640S

2SD1640S

更新时间： 2024-11-03 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 2A I(C) \| TO-126

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2SD1640S 数据手册

Power Transistors

2SD1640

Silicon NPN epitaxial planar type darlington

Unit: mm

+0.5

–0.1

For low-frequency output amplification

8.0

3.2 0.2

φ 3.16 0.1

I Features

•

Darlington connection

High forward current transfer ratio h_FE

Large peak collector current I_CP

High collector to emitter voltage V_CEO

I Absolute Maximum Ratings T_C= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

120

100

1: Emitter

2: Collector

3: Base

TO-126B Package

I_C

1.2

Internal Connection

Collector power dissipation

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

0.1

Unit

µA

Collector cutoff current

V_CB= 25 V, I_E= 0

Emitter cutoff current

I_EBO

V_EB= 4 V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

h_FE

I_C= 100 µA, I_E= 0

I_C= 1 mA, I_B= 0

120

100

I_E= 100 µA, I_C= 0

V_CE= 10 V, I_C= 1 A

I_C= 1 A, I_B= 1 mA

V_CE= 10 V, I_E= −50 mA, f = 200 MHz

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

4 000

40 000

1.5

V_CE(sat)

V_BE(sat)

f_T

150

MHz

Note) : Rank classification

Rank

h_FE

4 000 to 10 000 8 000 to 20 000 16 000 to 40 000

12 3

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