是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.92 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 25 W | 最大功率耗散 (Abs): | 25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 1.5 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1646C7 | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD1646C7K | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD1646K | ROHM |
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Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD1647 | ROHM |
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EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR | |
2SD1647C7 | ROHM |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD1647C7K | ROHM |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD1647K | ROHM |
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暂无描述 | |
2SD1649 | SAVANTIC |
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Silicon NPN Power Transistors | |
2SD1649 | ISC |
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Silicon NPN Power Transistors | |
2SD1649 | SANYO |
获取价格 |
COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(WITH DAMPER DIODE) |