5秒后页面跳转
2SD1650 PDF预览

2SD1650

更新时间: 2024-11-03 22:52:47
品牌 Logo 应用领域
永盛 - Wing Shing 晶体晶体管
页数 文件大小 规格书
1页 90K
描述
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

2SD1650 数据手册

  
2SD1650  
SILICON DIFFUSED POWER TRANSISTOR  
GENERAL DESCRIPTION  
Highvoltage,high-speed switching npn transistors in  
a plastic envelope with integrated efficiency diode,  
primarily for use in horizontal deflection circuites of  
colour television receivers  
QUICK REFERENCE DATA  
TO-3PML  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
Ptot  
VCEsat  
Icsat  
VF  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
3.5  
7.0  
50  
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
-
-
-
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
A
Tmb 25  
W
V
IC = 2.0A; IB = 0.4A  
f = 16KHz  
1.5  
-
A
IF = 2.0A  
2.0  
1.0  
V
Fall time  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
s
tf  
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
IB  
IBM  
Ptot  
Tstg  
Tj  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
3.5  
7.0  
1.5  
3
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
V
-
A
Collector current peak value  
Base current (DC)  
-
A
-
A
Base current peak value  
Total power dissipation  
Storage temperature  
-
-
A
Tmb 25  
50  
W
-55  
-
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
0.5  
UNIT  
mA  
Collector cut-off current  
VBE = 0V; VCE = VCESMmax  
VBE = 0V; VCE = VCESMmax  
Tj = 125  
-
-
ICE  
ICES  
1.0  
mA  
Collector-emitter sustaining voltage  
IB = 0A; IC = 100mA  
L = 25mH  
-
V
VCEOsust  
Collector-emitter saturation voltages  
Base-emitter satuation voltage  
DC current gain  
IC = 2.0A; IB = 0.4A  
IC = 2.0A; IB = 0.4A  
IC = 1A; VCE = 5V  
IF = 2.0A  
-
-
1.5  
2.0  
30  
V
V
VCEsat  
VBEsat  
hFE  
VF  
fT  
Cc  
8
Diode forward voltage  
2.0  
V
MHz  
pF  
s
Transition frequency at f = 1MHz  
Collector capacitance at f = 1MHz  
Switching times(16KHz line deflecton circuit)  
Turn-off storage time Turn-off fall time  
IC = 0.1A; VCE = 10V  
VCB = 10V  
3
100  
4.5  
1.0  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
IC=2A,IB1=-IB2=0.4A,VCC=140V  
ts  
tf  
s
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

与2SD1650相关器件

型号 品牌 获取价格 描述 数据表
2SD1650_15 JMNIC

获取价格

Silicon NPN Power Transistors
2SD1650_2015 JMNIC

获取价格

Silicon NPN Power Transistors
2SD1651 Wing Shing

获取价格

NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT)
2SD1651 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SD1651 ISC

获取价格

Silicon NPN Power Transistors
2SD1651 JMNIC

获取价格

Silicon NPN Power Transistors
2SD1651_15 JMNIC

获取价格

Silicon NPN Power Transistors
2SD1651_2015 JMNIC

获取价格

Silicon NPN Power Transistors
2SD1651C SANYO

获取价格

Color TV Horizontal Deflection Output Applications
2SD1652 SAVANTIC

获取价格

Silicon NPN Power Transistors