Datasheet > 2SD1650

2SD1650

更新时间： 2024-02-17 22:19:52

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	90K
描述
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SD1650 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

2SD1650 数据手册

2SD1650

SILICON DIFFUSED POWER TRANSISTOR

GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in

a plastic envelope with integrated efficiency diode,

primarily for use in horizontal deflection circuites of

colour television receivers

QUICK REFERENCE DATA

TO-3PML

SYMBOL

V_CESM

V_CEO

I_C

I_CM

P_tot

V_CEsat

I_csat

V_F

PARAMETER

CONDITIONS

MIN

MAX

1500

600

3.5

7.0

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Diode forward voltage

T_mb25

I_C= 2.0A; I_B= 0.4A

f = 16KHz

1.5

I_F= 2.0A

2.0

1.0

Fall time

I_C=2A,I_B1=-I_B2=0.4A,V_CC=140V

t_f

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

I_C

I_CM

I_B

I_BM

P_tot

T_stg

T_j

PARAMETER

CONDITIONS

MIN

MAX

1500

600

3.5

7.0

1.5

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Base current (DC)

Base current peak value

Total power dissipation

Storage temperature

Tmb 25

-55

150

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

0.5

UNIT

Collector cut-off current

V_BE= 0V; V_CE= V_CESMmax

T_j= 125

I_CE

I_CES

1.0

Collector-emitter sustaining voltage

I_B= 0A; I_C= 100mA

L = 25mH

V_CEOsust

Collector-emitter saturation voltages

Base-emitter satuation voltage

DC current gain

I_C= 2.0A; I_B= 0.4A

I_C= 1A; V_CE= 5V

I_F= 2.0A

1.5

2.0

V_CEsat

V_BEsat

h_FE

V_F

f_T

C_c

Diode forward voltage

2.0

MHz

Transition frequency at f = 1MHz

Collector capacitance at f = 1MHz

Switching times(16KHz line deflecton circuit)

Turn-off storage time Turn-off fall time

I_C= 0.1A; V_CE= 10V

V_CB= 10V

100

4.5

1.0

I_C=2A,I_B1=-I_B2=0.4A,V_CC=140V

t_s

t_f

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

下载PDF

与2SD1650相关器件

型号	品牌	描述	获取价格	数据表
2SD1650_15	JMNIC	Silicon NPN Power Transistors	获取价格
2SD1650_2015	JMNIC	Silicon NPN Power Transistors	获取价格
2SD1651	Wing Shing	NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT)	获取价格
2SD1651	SAVANTIC	Silicon NPN Power Transistors	获取价格
2SD1651	ISC	Silicon NPN Power Transistors	获取价格
2SD1651	JMNIC	Silicon NPN Power Transistors	获取价格