Datasheet > 2SD1294

2SD1294

更新时间： 2024-11-02 07:31:23

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	87K
描述
Silicon Power Transistors

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中文翻译

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数据手册

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2SD1294 数据手册

Product Specification

www.jmnic.com

Silicon Power Transistors

2SD1294

DESCRIPTION

·With TO-3P(I) package

·Included avalanche diode

·High DC current gain

·Darlington connected type

APPLICATIONS

·Power regulator for line

operated TV

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

emitter

Fig.1 simplified outline (TO-3P(I)) and symbol

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

60±15

Open base

60±15

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CP

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

JMnic

12 3

中文翻译

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2SD1295S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SD1296	NEC	获取价格	Darlington Power Transistors