Datasheet > 2SD1295-R

2SD1295-R

更新时间： 2024-11-03 01:07:15

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1295-R 数据手册

SMD Type

Transistors

NPN Transistors

2SD1295

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● High collector to emitter VCEO

● Large collector power dissipation P

● Complementary to 2SB968

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

1.5

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 1 mA， I

Ic= 2 mA， I

= 0

IE= 1 mA， IC= 0

ICBO

ICEO

EBO

CB= 50 V , I

CE= 40 V , I

= 0

E= 0

100

EB= 5V , I

=1.5 A, I

=2 A, I =200mA

CE= 5V, I = 1 A

CB= 20V, I = 0,f=1MHz

^CE= 5V, I = 500mA,f=200MHz

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

B=150mA

1.5

220

hFE

Collector output capacitance

Transition frequency

150

MHz

■ Classification of hfe

Type

2SD1295-P

50-100

2SD1295-Q

80-160

2SD1295-R

120-220

Range

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