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2SD1160_06 PDF预览

2SD1160_06

更新时间: 2024-11-30 04:26:11
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
5页 149K
描述
Silicon NPN Epitaxial Type (PCT Process)

2SD1160_06 数据手册

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2SD1160  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
2SD1160  
Switching Applications  
Unit: mm  
Suitable for Motor Drive Applications  
High DC current gain  
Low saturation voltage: V  
= 0.6 V (max) (I = 2A, I = 40 mA)  
C B  
CE (sat)  
Built-in free wheel diode  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
20  
6
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
DC  
I
2
C
Collector current  
A
A
Pulse  
I
4
CP  
Diode forward surge current (t = 1 s)  
I
1
FP  
Ta = 25°C  
1
Collector power  
dissipation  
P
W
C
Tc = 25°C  
10  
150  
JEDEC  
JEITA  
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-7B1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.36 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
COLLECTOR  
EMITTER  
BASE  
800 Ω  
1
2006-11-21  

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