Datasheet > 2SD1065-R

2SD1065-R

更新时间： 2024-10-16 06:46:35

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
4页	39K
描述
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

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2SD1065-R 数据手册

Ordering number:ENN825C

PNP/NPN Epitaxial Planar Silicon Tranasistors

2SB829/2SD1065

50V/15A Switching Applications

Applications

Package Dimensions

unit:mm

· Relay drivers, high-speed inverters, converters, and

other general high-current switching applications.

2022A

[2SD829/2SD1065]

15.6

14.0

Features

3.2

4.8

2.0

· Low-saturation collector-to-emitter voltage :

=–0.5V max.

CE(sat)

· Wide ASO leading to high resistance to breakdown.

1.6

1.0

2.0

0.6

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PB

( ) : 2SB829

5.45

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)60

(–)50

(–)6

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)15

(–)20

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Tc=25˚C

˚C

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)40V, I =0

(–)0.1

280*

CBO

Emitter Cutoff Current

=(–)4V, I =0

EBO

=(–)2V, I =(–)1A

70*

DC Current Gain

=(–)2V, I =(–)8A

Gain-Bandwidth Product

Collector-to-Emitter Saturation Voltage

=(–)5V, I =(–)1A

(–0.26) (–0.5)

0.18 0.4

MHz

=(–)8A, I =(–)0.4A

CE(sat)

* : The 2SB829/2SD1065 are classified by 1A h as follows :

Continued on next page.

Rank

70 to 140

100 to 200 140 to 280

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O0303TN (KT)/91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4

12 3 4

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与2SD1065-R相关器件

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2SD1065S	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,15A I(C),TO-218VAR
2SD1068	SONY	获取价格	TENTATIVE
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2SD1071	FUJI	获取价格	TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER
2SD1071	UTC	获取价格	HIGH VOLTAGE POWER AMPLIFIER
2SD1071_15	UTC	获取价格	HIGH VOLTAGE POWER AMPLIFIER
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