是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.7 A | 配置: | Single |
最小直流电流增益 (hFE): | 200 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1007HP-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SD1007HP-T1-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, POWER, | |
2SD1007HP-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, POWER, | |
2SD1007HP-T2-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,120V V(BR)CEO,700MA I(C),TO-243 | |
2SD1007HQ | ETC |
获取价格 |
BJT | |
2SD1007HQ-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,120V V(BR)CEO,700MA I(C),TO-243 | |
2SD1007HQ-AZ | RENESAS |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SD1007HQ-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,120V V(BR)CEO,700MA I(C),TO-243 | |
2SD1007HR | ETC |
获取价格 |
BJT | |
2SD1007HR-AZ | NEC |
获取价格 |
暂无描述 |