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2SD1007-R PDF预览

2SD1007-R

更新时间: 2024-11-25 01:07:11
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描述
NPN Transistors

2SD1007-R 数据手册

 浏览型号2SD1007-R的Datasheet PDF文件第2页浏览型号2SD1007-R的Datasheet PDF文件第3页 
SMD Type  
Transistors  
NPN Transistors  
2SD1007  
1.70 0.1  
Features  
High collector to emitter voltage: VCEO 120V.  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
120  
120  
V
5
V
Collector current  
0.7  
A
Collector current (pulse) *  
Collector power dissipation  
Junction temperature  
IC (pu)  
Pc  
1.2  
2
A
W
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
*. PW 10ms,duty cycle 50%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Test Conditions  
Ic= 100 μAI = 0  
Ic=1 mAI = 0  
= 100μAI = 0  
CB= 120 V , I = 0  
EB= 5V , I =0  
Min  
120  
120  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
I
CBO  
EBO  
V
V
E
0.1  
0.1  
uA  
V
I
C
Collector-emitter saturation voltage *  
Base - emitter saturation voltage *  
Base - emitter voltage *  
V
CE(sat)  
BE(sat)  
I
I
C
=500 mA, I  
B
=50mA  
=50mA  
0.6  
V
C=500 mA, I  
B
1.5  
V
BE  
V
V
V
V
V
CE= 10V, I  
C
= 10mA  
0.55  
45  
0.68  
CE= 1V, I  
CE= 1V, I  
C
= 5mA  
200  
200  
10  
DC current gain  
*
hFE  
C= 100mA  
90  
400  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V, I  
CE= 10V, I  
E=0,f=1MHz  
pF  
f
C= 10mA  
90  
MHz  
*. PW 350us,duty cycle 2%  
hFE Classification(2)  
Type  
Range  
Marking  
2SD1007-R  
90-180  
HR  
2SD1007-Q  
135-270  
HQ  
2SD1007-P  
200-400  
HP  
1
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