Datasheet > 2SD1010S

2SD1010S

更新时间： 2024-11-26 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	51K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SD1010S 数据手册

Transistor

2SD1010

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

4.0±0.2

5.0±0.2

Features

High foward current transfer ratio h_FE

■

●

Low collector to emitter saturation voltage V_CE(sat)

High emitter to base voltage V_EBO

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

■

0.45–⁺0⁰.^.1²

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

1.27

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1 2 3

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

100

˚C

2.54±0.15

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

V_CB= 20V, I_E= 0

µA

Collector cutoff current

I_CEO

V_CE= 20V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 10V, I_C= 2mA

I_C= 10mA, I_B= 1mA

V_CB= 10V, I_E= –2mA, f = 200MHz

V_CE= 10V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

400

1000

0.05

200

2000

0.2

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

Noise voltage

^*h_FERank classification

Rank

h_FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

12 3

中文翻译

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