Datasheet > 2SCR543R

2SCR543R

更新时间： 2024-09-19 07:31:19

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
6页	430K
描述
Midium Power Transistors (50V / 3A)

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中文翻译

获取价格

数据手册

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2SCR543R 数据手册

Midium Power Transistors (50V / 3A)

2SCR543R

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

TSMT3

 Features

1) Low saturation voltage

(3)

_{CE (sat)}= 0.35V (Max.) (I_C/ I_B= 2A / 100mA)

2) High speed switching

(1)

(2)

(1) Base

 Applications

(2) Emitter

(3) Collector

Abbreviated symbol : NR

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

(3)

Package

TSMT3

Type

Code

Basic ordering unit (pieces) 3000

(1)

Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

(1) Base

(2) Emitter

(3) Collector

V_CBO

V_CEO

V_EBO

I_C

(2)

Collector current

Pulsed

I_CP

P_D

T_j

0.5

°C

Power dissipation

1.0

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Mounted on a recommended land.

*3 Mounted on a 40×40×0.7[mm] ceramic substrate.

www.rohm.com

2010.12 - Rev.A

1/5

12 3 4 5 6

中文翻译

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