Datasheet > 2SCR553P_09

2SCR553P_09

更新时间： 2022-09-18 09:56:24

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	228K
描述
Midium Power Transistors (50V / 2A)

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数据手册

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2SCR553P_09 数据手册

Midium Power Transistors (50V / 2A)

2SCR553P

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

V_{CE (sat)}= 0.13V (Max.) (I_C/ I_B= 700mA / 35mA)

(1)

(2) (3)

2) High speed switching

 Applications

Abbreviated symbol : NG

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

Package

Taping

T100

(2)

Type

Code

Basic ordering unit (pieces) 1000

2SCR553P



(1)

 Absolute maximum ratings (Ta = 25C)

(1) Base

(2) Collector

(3) Emitter

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

V_CBO

V_CEO

V_EBO

I_C

(3)

Collector current

Pulsed

I_CP

P_D

T_j

0.5

C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

2009.12 - Rev.A

1/4

12 3 4 5

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