Datasheet > 2SCR553P_09

2SCR553P_09

更新时间： 2022-09-18 09:56:24

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	228K
描述
Midium Power Transistors (50V / 2A)

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2SCR553P_09 数据手册

2SCR553P

Data Sheet

Electrical characteristic curves



5mA

3.0mA

2.5mA

1000

100

1000

100

0.50

V_CE=2V

Ta=25°C

2.0mA

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

1.5mA

1.0mA

0.5mA

V_CE=5V

Ta=125°C

75°C

25°C

-40°C

Ta=25°C

1.5 2

100

1000

[mA]

10000

100

1000

[mA]

10000

0.5

COLLECTOR CURRENT : I

COLECTOR TO EMITTER VOLTAGE : VCE[V]

Fig.1 Typical Output Characteristics

COLLECTOR CURRENT : I

Fig3. DC Current Gain vs.

Fig.2 DC Current Gain vs.

Collector Current ( ΙΙ )

Collector Current ( Ι )

0.1

10000

1000

100

IC/IB=20

Ta=25°C

CE=2V

Ta=125°C

75°C

25°C

-40°C

/IB

=50

Ta=125°C

75°C

0.01

0.001

0.01

0.001

25°C

-40°C

100

1000

[mA]

10000

100

1000

10000

0.5

1.5

COLLECTOR CURRENT : I

[mA]

BASE TO EMITTER VOLTAGE :V^BE[V]

Fig.5 Collector-Emitter Saturation Voltage

Fig.4 Collector-Emitter Saturation Voltage

Fig.6 Ground Emitter Propagation

Characteristics

vs. Collector Current ( ΙΙ )

vs. Collector Current ( Ι )

1000

100

1000

100

Single pulse

Ta=25°C

f=1MHz

CE=10V

1ms

=0A

10ms

Cib

=0A

100ms

DC Ta=25°C

0.1

0.01

(Mounted on a

Cob

recommended land)

DC Ta=25°C

(Mounted on a ceramic board)

100

EMITTER CURRENT : IE[mA]

1000

0.1

100

0.1

100

COLLECTOR - BASE VOLTAGE : VCB [V]

EMITTER - BASE VOLTAGE : V^EB[V]

COLLECTOR TO EMITTER VOLTAGE : V^CE[V]

Fig.9 Safe Operating Area

Fig.8 Gain Bandwidth Product vs.

Emitter Current

Fig.7 Emitter Input Capacitance vs.

Emitter-Base Voltage

Collector Output Capacitance vs.

Collector-Base Voltage

www.rohm.com

2009.12 - Rev.A

3/4

1 234 5

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