Datasheet > 2SCR552P_09

2SCR552P_09

更新时间： 2024-02-21 02:00:42

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	236K
描述
Midium Power Transistors (30V / 3A)

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中文翻译

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数据手册

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2SCR552P_09 数据手册

Midium Power Transistors (30V / 3A)

2SCR552P

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

V_{CE (sat)}= 0.4V (Max.) (I_C/ I_B= 1A / 50mA)

(1)

(2) (3)

2) High speed switching

 Applications

Abbreviated symbol : NF

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

Package

Taping

T100

(2)

Type

Code

Basic ordering unit (pieces) 1000

2SCR552P



(1)

 Absolute maximum ratings (Ta = 25C)

(1) Base

(2) Collector

(3) Emitter

(3)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector current

Pulsed

I_CP

P_D

T_j

0.5

C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

2009.12 - Rev.A

1/4

12 3 4 5

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与2SCR552P_09相关器件

型号	品牌	获取价格	描述	数据表
2SCR552P5	ROHM	获取价格	2SCR552P5是低VCE(sat)的晶体管，适合高速开关的低频放大用途。
2SCR552P5T100	ROHM	获取价格	Small Signal Bipolar Transistor,
2SCR552PHZG	ROHM	获取价格	Small Signal Bipolar Transistor,
2SCR552PT100	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SCR553P	ROHM	获取价格	Midium Power Transistors (50V / 2A)
2SCR553P_09	ROHM	获取价格	Midium Power Transistors (50V / 2A)
2SCR553P5	ROHM	获取价格	2SCR553P5是低VCE(sat)的晶体管，适合高速开关的低频放大用途。
2SCR553P5T100	ROHM	获取价格	Small Signal Bipolar Transistor,
2SCR553PFRAT100	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
2SCR553PHZG	ROHM	获取价格	2SCR553PHZG是低VCE(sat)的低频放大用晶体管。