Datasheet > 2SCR544R_11

2SCR544R_11

更新时间： 2024-01-15 15:48:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	205K
描述
Midium Power Transistors

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中文翻译

获取价格

数据手册

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2SCR544R_11 数据手册

Midium Power Transistors (80V / 2.5A)

2SCR544R

Structure

Dimensions

(Unit : mm)



NPN Silicon epitaxial planar transistor

TSMT3

1.0MAX

2.9

0.4

Features



0.85

0.7

1) Low saturation voltage, typically

_{CE (sat)}= 0.3V (Max.) (I_C/ I_B= 1A / 50mA)

2) High speed switching

(

)

( )

0.95 0.95

1.9

0.16

(1) Base

Applications



(2) Emitter

(3) Collector

Abbreviated symbol : NS

Driver

Packaging specifications



Inner circuit



(Unit : mm)

Package

Code

Taping

(3)

Type

2SCR544R

Basic ordering unit (pieces) 3000



(1)

Absolute maximum ratings



(Ta = 25°C)

Symbol

(1) Base

Parameter

Limits

Unit

(2) Emitter

(3) Collector

(2)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V_CBO

V_CEO

V_EBO

I_C

2.5

Collector current

Pulsed

I_CP

P_D

T_j

0.5

°C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

2010.02 - Rev.A

1/4

12 3 4 5

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