Datasheet > 2SC867_2014

2SC867_2014

更新时间： 2024-09-19 01:17:31

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	160K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC867_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC867

DESCRIPTION

·With TO-66 package

·High collector-base breakdown voltage

:V_CBO=400V(min)

APPLICATIONS

·For high voltage and switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

400

Open base

150

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_D

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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