Datasheet > 2SC898

2SC898

更新时间： 2022-12-18 10:41:08

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	189K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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2SC898 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC898

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 150V (Min)

·Low Collector Saturation Voltage-

: V_CE(sat)= 1.5V(Max.)@ I_C= 6A

APPLICATIONS

·Designed for amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

MAX

150

UNIT

Collector Current-Continuous

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

-55~150

T_stg

Storage Temperature Range

isc Website：www.iscsemi.cn

中文翻译

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