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2SC5801-A-FB PDF预览

2SC5801-A-FB

更新时间: 2024-01-06 03:55:41
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
21页 441K
描述
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3

2SC5801-A-FB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:5.5 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e3/e6元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:MATTE TIN/TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6500 MHz
Base Number Matches:1

2SC5801-A-FB 数据手册

 浏览型号2SC5801-A-FB的Datasheet PDF文件第2页浏览型号2SC5801-A-FB的Datasheet PDF文件第3页浏览型号2SC5801-A-FB的Datasheet PDF文件第4页浏览型号2SC5801-A-FB的Datasheet PDF文件第5页浏览型号2SC5801-A-FB的Datasheet PDF文件第6页浏览型号2SC5801-A-FB的Datasheet PDF文件第7页 
NPN SILICON RF TRANSISTOR  
NE851M13 / 2SC5801  
NPN SILICON RF TRANSISTOR FOR  
HIGH-FREQUENCY LOW NOISE  
3-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low phase distortion, low voltage operation  
Ideal for OSC applications  
3-pin lead-less minimold package  
ORDERING INFORMATION  
Part Number  
NE851M13-A  
Quantity  
Supplying Form  
• 8 mm wide embossed taping  
50 pcs (Non reel)  
2SC5801-A  
NE851M13-T3-A  
2SC5801-T3-A  
10 kpcs/reel  
• Pin 2 (Base) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
9.0  
Unit  
V
5.5  
V
1.5  
V
100  
mA  
mW  
C  
C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
140  
Tj  
150  
Tstg  
65 to +150  
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB  
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge  
Document No. PU10085EJ02V0DS (2nd edition)  
Date Published March 2002 CP(K)  
The mark shows major revised points.  

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