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2SC5804 PDF预览

2SC5804

更新时间: 2024-09-25 22:52:47
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管
页数 文件大小 规格书
2页 48K
描述
SMALL-SIGNAL TRANSISTOR

2SC5804 数据手册

 浏览型号2SC5804的Datasheet PDF文件第2页 
SMALL-SIGNAL TRANSISTOR〉  
PRELIMINARY  
2SC 5804  
Notics:This is not a final specification.  
FOR LOW  
FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
Some parametric limits are subject to change. ꢀ  
DESCRIPTION  
OUTLINE DRAWING  
Unit  
:mm  
2SC5804isa super mini package resin sealed  
silicon NPN epitaxial transistor,  
It is designed for low frequency application.  
Since it is a super-thin flat lead type package,a high-density  
mountingarepossible.  
0.8  
0.2  
0.2  
Complementary with 2SC3052.  
FEATURE  
●Super-thin flat lead type package.t=0.45mm  
●Excellent linearly of DC forward current gain.  
●Low collector to emitter saturation voltage  
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)  
APPLICATION  
For hybrid IC,small type machine low frequency voltage amplify  
application.  
MAXIMUM RATINGSTa=25)  
JEITA:  
Symbol  
VCBO  
VCEO  
VEBO  
I O  
Parameter  
Ratings  
Unit  
V
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
50  
TERMINAL CONNECTER  
BASE  
6
50  
V
V
EMITTER  
200  
mA  
mW  
COLLECTOR  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
100  
Tj  
+125  
-55~+125  
Tstg  
ELECTRICAL CHARACTERISTICSTa=25)  
Limits  
Typ  
-
Min  
50  
-
Max  
Collector to Emitter Breakdown voltage  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
DC forward current gain  
C toE saturation voltage  
Gain bandwidth product  
Collector output capacitance  
Noise figure  
V(BR)CEO  
I =100μA, R BE=∞  
C
V
0.1  
μA  
ICBO  
IEBO  
hFE  
hFE  
V CB=50V, I E=0mA  
V EB=6V, I C=0mA  
V CE=6V, I C=1mA  
V CE=6V, I C=0.1mA  
-
-
0.1  
800  
-
μA  
-
150  
90  
-
-
-
VCE(sat) I =100mA, I B=10mA  
C
-
0.3  
-
v
fT  
V CE=6V, I E=-10mA  
-
200  
2.5  
-
MHz  
pF  
dB  
Cob  
NF  
V CB=6V, I E=0mA,f=1MHz  
-
-
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ  
-
15  
ꢀꢀꢀꢀꢀ  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
※ꢀItshows hFE classification in below table.  
Item  
hFE  
E
F
G
150~300  
250~500  
400~800  
Abbrivation  
LE  
LF  
LG  
ISAHAYA  
ELECTRONICSCORPORATION  

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