〈SMALL-SIGNAL TRANSISTOR〉
PRELIMINARY
2SC 5804
Notics:This is not a final specification.
FOR LOW
ꢀFREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
Some parametric limits are subject to change. ꢀ
DESCRIPTION
OUTLINE DRAWING
Unit
:mm
ꢀ2SC5804isa super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
ꢀmountingarepossible.
0.8
0.2
0.2
Complementary with 2SC3052.
①
②
FEATURE
③
●Super-thin flat lead type package.ꢀt=0.45mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS(Ta=25℃)
JEITA:
Symbol
VCBO
VCEO
VEBO
I O
Parameter
Ratings
Unit
V
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
50
TERMINAL CONNECTER
①:BASE
6
50
V
V
②:EMITTER
200
mA
mW
℃
℃
③:COLLECTOR
Pc
Collector dissipation
Junction temperature
Storage temperature
100
Tj
+125
-55~+125
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Typ
―
-
Min
50
-
Max
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C toE saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
I =100μA, R BE=∞
C
―
V
0.1
μA
ICBO
IEBO
hFE
hFE
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
-
-
0.1
800
-
μA
-
150
90
-
※
-
-
VCE(sat) I =100mA, I B=10mA
C
-
0.3
-
v
fT
V CE=6V, I E=-10mA
-
200
2.5
-
MHz
pF
dB
Cob
NF
V CB=6V, I E=0mA,f=1MHz
-
-
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
-
15
ꢀꢀꢀꢀꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
※ꢀItshows hFE classification in below table.
Item
hFE
E
F
G
150~300
250~500
400~800
Abbrivation
LE
LF
LG
ISAHAYA
ꢀELECTRONICSꢀCORPORATION